As more and more data centers seek to reduce the number of servers they use, developing of high capacity memory chips become necessary. To address this issue Samsung has developed the world's first 4 gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology. The development of this low-power 4 Gb DDR3 chip will help in reducing data center costs, improving server time management and increasing overall efficiency.
In addition for the new generation of "green" servers, the 4Gb DDR3 chip's high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
The 4 Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, as well as 8 GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8 GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32 GB -- offering twice as much capacity as memory modules based on the previous highest chip density of 2 Gb.
Designed to be low-powered, the 4 Gb DDR3 DRAM operates at 1.35 volts (V), thereby improving its throughput by 20 percent over a 1.5 V DDR3 chip. Its maximum speed is 1.6 gigabits per second (Gbps). In a 16 GB module configurations, the 4 Gb DDR3 chip can consume 40 percent less power compared to the 2 Gb DDR3 chip because of the formers higher density.
In continuation to Part 2 of this series "How to Take Your Biz Online and Beyond", Abhishek M. Gupta, VP (Technology) of Lime Spot Technology, in Part 3, discusses how to increase traffic by by "affiliate marketing". Read on...
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